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HM5117805TS-6 参数 Datasheet PDF下载

HM5117805TS-6图片预览
型号: HM5117805TS-6
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM (2- Mword ×8位)的2千刷新 [16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh]
分类和应用: 动态存储器
文件页数/大小: 32 页 / 539 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EO
Description
Features
HM5117805 Series
16 M EDO DRAM (2-Mword
×
8-bit)
2 k Refresh
E0156H10 (Ver. 1.0)
(Previous ADE-203-630D (Z))
Jun. 27, 2001
The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord
×
8-bit. It employs the most
adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta
Out (ED O) P age Mode as a high spee d ac ce ss mode. Multiplexe d addr ess input per mits the HM5117805 to
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
Single 5 V (±10%)
Access time: 50 ns/60 ns/70 ns (max)
Power dissipation
Active mode: 605 mW/550 mW/495 mW (max)
Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
EDO page mode capability
Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
LP
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