HM5112805FLTD-6, HM5113805FLTD-6
128M EDO DRAM (16-Mword
×
8-bit)
8k refresh/4k refresh
L
EO
Description
Features
•
Single 3.3 V supply: 3.3 V ± 0.3 V
•
Access time: 60 ns (max)
•
Power dissipation
Active: 720 mW (max) (HM5112805F)
792 mW (max) (HM5113805F)
E0176H10 (Ver. 1.0)
Jul. 12, 2001
The HM5112805F L, HM5113805F L ar e 128M-bit dynamic R AMs orga nized as 16, 777,216-w ord
×
8-bit.
The y have re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology.
HM5112805F L, HM5113805F L off er Extende d Da ta Out (ED O) P age Mode as a high spee d ac ce ss mode.
They are packaged in 32-pin plastic TSOPII.
Standby : 1.8 mW (max) (CMOS interface) (L-version)
•
EDO page mode capability
•
Refresh cycles
RAS-only
refresh
8192 cycles/64 ms (HM5112805F)
4096 cycles/64 ms (HM5113805F)
CBR/Hidden refresh
4096 cycles/64 ms (HM5112805F, HM5113805F)
This product became EOL in December, 2006.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Pr
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ELPIDA [ ELPIDA MEMORY ]
