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HM5113165FTD-6 参数 Datasheet PDF下载

HM5113165FTD-6图片预览
型号: HM5113165FTD-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128M EDO DRAM ( 8 Mword × 16位) 4K的刷新 [128M EDO DRAM (8-Mword × 16-bit) 4k refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 27 页 / 248 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5113165FTD-6
128M EDO DRAM (8-Mword
×
16-bit)
4k refresh
EO
Description
Features
Type No.
HM5113165FTD-6
E0177H10 (Ver. 1.0)
Jul. 5, 2001
The HM5113165F is 128M-bit dynamic R AM orga nized as 8, 388,608-w ord
×
16-bit. It has re alize d high
per forma nce and low powe r by employing C MOS proc ess tec hnology. HM5113165F off ers Extende d Da ta
Out (EDO) Page Mode as a high speed access mode. It is packaged in 50-pin plastic TSOPII.
Single 3.3 V supply: 3.3 V ± 0.3 V
Access time: 60 ns (max)
Power dissipation
Active: 828 mW (max)
Standby : 3.6 mW (max) (CMOS interface)
EDO page mode capability
Refresh cycles
RAS-only
refresh
4096 cycles /64 ms
CBR/Hidden refresh
4096 cycles /64 ms
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
2CAS-byte control
Ordering Information
Access time
60 ns
Package
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
L
This product became EOL in December, 2006.
od
Pr
400-mil 50-pin plastic TSOP II (TTP-50DE)
t
uc