HM5113165LTD-6
128M EDO DRAM (8-Mword
×
16-bit)
4k refresh
EO
Description
Features
E0178H10 (Ver. 1.0)
Jul. 12, 2001
The HM5113165F L is 128M-bit dynamic R AM orga nized as 8, 388, 608-word
×
16-bit. It has re alize d high
per forma nce and low powe r by employing C MOS proc ess tec hnology. HM5113165F L off ers Extende d Da ta
Out (EDO) Page Mode as a high speed access mode. It is packaged in 50-pin plastic TSOPII.
•
Single 3.3 V supply: 3.3 V ± 0.3 V
•
Access time: 60 ns (max)
•
Power dissipation
⎯
Active: 828 mW (max)
⎯
Standby : 1.8 mW (max) (CMOS interface) (L-version)
•
EDO page mode capability
•
Refresh cycles
⎯
RAS-only
refresh
4096 cycles /64 ms
⎯
CBR/Hidden refresh
4096 cycles /64 ms
•
4 variations of refresh
⎯
RAS-only
refresh
⎯
CAS-before-RAS
refresh
⎯
Hidden refresh
⎯
Self refresh (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
L
This product became EOL in December, 2006.
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ELPIDA [ ELPIDA MEMORY ]
