HM5112805FTD-5,
HM5113805FTD-5
128M EDO DRAM (16-Mword
×
8-bit)
8k refresh/4k refresh
EO
Description
Features
E0174H10 (Ver. 1.0)
(Previous ADE-203-1052B (Z))
Jul. 16, 2001
The HM5112805F Series, HM5113805F Series are 128M-bit dynamic RAMs organized as 16,777,216-word
×
8-bit. The y have re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology.
HM5112805F S erie s, HM5113805F S erie s off er Extende d Da ta Out (ED O) P age Mode as a high spee d
access mode. They are packaged in 32-pin plastic TSOPII.
•
Single 3.3 V supply: 3.3 V ± 0.15 V
•
Access time: 50 ns (max)
•
Power dissipation
⎯
Active: 759 mW (max) (HM5112805F Series)
897 mW (max) (HM5113805F Series)
⎯
Standby : 3.5 mW (max) (CMOS interface)
•
EDO page mode capability
•
Refresh cycles
⎯
RAS-only
refresh
8192 cycles/64 ms (HM5112805F)
4096 cycles/64 ms (HM5113805F)
⎯
CBR/Hidden refresh
4096 cycles/64 ms (HM5112805F, HM5113805F)
•
3 variations of refresh
⎯
RAS-only
refresh
⎯
CAS-before-RAS
refresh
⎯
Hidden refresh
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
L
This product became EOL in December, 2006.
od
Pr
t
uc