HM5116405 Series, HM5117405 Series
DC Characteristics
(Ta = 0 to +70˚C, VCC = 5 V ± 10%, VSS = 0 V) (HM5117405 Series)
HM5117405
-5
-6
-7
Parameter
Symbol Min Max Min Max Min Max Unit
Test conditions
1
2
,
Operating current*
Standby current
*
ICC1
ICC2
—
—
100 — 90
—
—
80 mA
tRC = min
2
—
2
2
mA
TTL interface
RAS, CAS = VIH
Dout = High-Z
—
—
1
—
1
—
1
mA
CMOS interface
RAS, CAS ≥ VCC – 0.2 V
Dout = High-Z
Standby current
(L-version)
ICC2
150 — 150 — 150 µA
CMOS interface
RAS, CAS ≥ VCC – 0.2 V
Dout = High-Z
RAS-only refresh current*2
Standby current*1
ICC3
ICC5
—
—
100 — 90
—
—
80 mA
mA
tRC = min
5
—
5
5
RAS = VIH
CAS = VIL
Dout = enable
CAS-before-RAS refresh
ICC6
—
100 — 90
90 80
—
—
80 mA
75 mA
tRC = min
current
EDO page mode current*1, *3 ICC7
—
—
—
tHPC = min
Battery backup current
ICC10
350 — 350 — 350 µA
CMOS interface
Dout = High-Z, CBR
refresh: tRC = 62.5 µs
t
RAS ≤ 0.3 µs
Input leakage current
Output leakage current
ILI
–10 10 –10 10 –10 10 µA
–10 10 –10 10 –10 10 µA
0 V ≤ Vin ≤ 7 V
ILO
0 V ≤ Vin ≤ 7 V
Dout = disable
Output high voltage
Output low voltage
VOH
VOL
2.4 VCC 2.4 VCC 2.4 VCC
0.4 0.4 0.4
V
V
High Iout = –2 mA
Low Iout = 2 mA
0
0
0
Notes : 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
Data Sheet E0151H10
9
ELPIDA [ ELPIDA MEMORY ]
