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HM5117405LTS-5 参数 Datasheet PDF下载

HM5117405LTS-5图片预览
型号: HM5117405LTS-5
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM ( 4 - Mword “ 4位), 4K的刷新/ 2 k刷新 [16 M EDO DRAM (4-Mword ´ 4-bit) 4 k Refresh/2 k Refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 34 页 / 560 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5116405 Series, HM5117405 Series  
Refresh during test mode operation can be performed by normal read cycles or by WCBR  
refresh cycles.  
To get out of test mode and enter a normal operation mode, perform either a regular CAS-  
before-RAS refresh cycle or RAS-only refresh cycle.  
20. In a test mode read cycle, the value of tRAC, tAA, tCAC and tCPA is delayed by 2 ns to 5 ns for the  
specified value. These parameters should be specified in test mode cycles by adding the above  
value to the specified value in this data sheet.  
21. tHPC (min) can be achieved during a series of EDO page mode write cycles or EDO page mode  
read cycles. If both write and read operation are mixed in a EDO page mode RAS cycle (EDO  
page mode mix cycle (1), (2)), minimum value of CAS cycle (tCAS + tCP + 2 tT) becomes greater  
than the specified tHPC (min) value. The value of CAS cycle time of mixed EDO page mode is  
shown in EDO page mode mix cycle (1) and (2).  
Data output turns off and becomes high impedance from later risting edge of RAS and CAS.  
Hold time and turn off time are specified by the timing specifications of later rising edge of RAS  
and CAS between tOHR and tOH, and between tOFR and tOFF  
.
22. Data output turns off and becomes high impedance from later rising edge of RAS and CAS .  
Hold time and turn off time are specified by the timing specifications of later rising edge of RAS  
and CAS between tOHR and tOH and between tOFR and tOFF  
.
23. XXX: H or L (H: VIH (min) VIN VIH (max), L: VIL (min) V VIL (max))  
IN  
///////: Invalid Dout  
When the address, clock and input pins are not described on timing waveforms, their pins must  
be applied VIH or VIL.  
Data Sheet E0151H10  
16