HM5116405 Series, HM5117405 Series
EO
Test Conditions
Parameter
RAS
pulse width
CAS
pulse width
RAS
hold time
CAS
hold time
AC Characteristics
(Ta = 0 to +70˚C, V
CC
= 5 V ±10%, V
SS
= 0 V) *
1
, *
2
, *
18
•
Input rise and fall time: 2 ns
•
Input levels: V
IL
= 0 V, V
IH
= 3 V
•
Input timing reference levels: 0.8 V, 2.4 V
•
Output timing reference levels: 0.8 V, 2.0 V
•
Output load: 1 TTL gate + C
L
(100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM5116405/HM5117405
-5
Min
84
30
7
50
7
0
7
0
7
Max
—
—
—
-6
Min
104
40
10
Max
—
—
—
-7
Min
124
50
13
Max
—
—
—
Unit
ns
ns
ns
Notes
Random read or write cycle time
RAS
precharge time
CAS
precharge time
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS
to
CAS
delay time
RAS
to column address delay time
CAS
to
RAS
precharge time
OE
to Din delay time
OE
delay time from Din
CAS
delay time from Din
Transition time (rise and fall)
LP
Symbol
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
OED
t
DZO
t
DZC
t
T
10000 60
10000 70
10000 13
—
—
—
—
45
0
10
0
13
14
10000 ns
10000 ns
—
—
—
—
52
35
—
—
—
—
—
—
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
6
6
7
3
4
Data Sheet E0151H10
11
ro
—
—
—
—
11
9
10
35
5
13
0
0
2
37
25
—
—
—
—
—
—
50
10000 10
0
10
0
10
14
du
12
13
40
30
—
—
12
13
45
5
—
5
15
—
18
0
0
—
—
0
0
2
50
2
ct
ELPIDA [ ELPIDA MEMORY ]
