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HM5164805FTT-5 参数 Datasheet PDF下载

HM5164805FTT-5图片预览
型号: HM5164805FTT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 64男EDO DRAM ( 8 Mword × 8位)为8K刷新/ 4K的刷新 [64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh]
分类和应用: 动态存储器
文件页数/大小: 34 页 / 220 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5164805F Series
HM5165805F Series
EO
Description
Features
64 M EDO DRAM (8-Mword
×
8-bit)
8 k Refresh/4 k Refresh
E0098H10 (1st edition)
(Previous ADE-203-1057C (Z))
Jan. 31, 2001
The HM5164805F S erie s, HM5165805F S erie s ar e 64M-bit dynamic R AMs orga nized as 8, 388,608-w ord
×
8-bit. The y have re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology.
HM5164805F S erie s, HM5165805F S erie s off er Extende d Da ta Out (ED O) P age Mode as a high spee d
ac ce ss mode. The y have the pac kage var iation of standa rd 32-pin plastic S OJ and standa rd 32-pin plastic
TSOPII.
Single 3.3 V supply: 3.3 V ± 0.3 V
Access time: 50 ns/60 ns (max)
Power dissipation
Active: 414 mW/378 mW (max) (HM5164805F Series)
: 486 mW/414 mW (max) (HM5165805F Series)
Standby : 1.8 mW (max) (CMOS interface)
: 1.1 mW (max) (L-version)
EDO page mode capability
Refresh cycles
RAS-only
refresh
8192 cycles /64 ms (HM5164805F, HM5164805FL)
4096 cycles /64 ms (HM5165805F, HM5165805FL)
CBR/Hidden refresh
4096 cycles /64 ms (HM5164805F, HM5164805FL, HM5165805F, HM5165805FL)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
L
This product became EOL in December, 2006.
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