HM5164805F Series
HM5165805F Series
EO
Description
Features
64 M EDO DRAM (8-Mword
×
8-bit)
8 k Refresh/4 k Refresh
E0098H10 (1st edition)
(Previous ADE-203-1057C (Z))
Jan. 31, 2001
The HM5164805F S erie s, HM5165805F S erie s ar e 64M-bit dynamic R AMs orga nized as 8, 388,608-w ord
×
8-bit. The y have re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology.
HM5164805F S erie s, HM5165805F S erie s off er Extende d Da ta Out (ED O) P age Mode as a high spee d
ac ce ss mode. The y have the pac kage var iation of standa rd 32-pin plastic S OJ and standa rd 32-pin plastic
TSOPII.
•
Single 3.3 V supply: 3.3 V ± 0.3 V
•
Access time: 50 ns/60 ns (max)
•
Power dissipation
Active: 414 mW/378 mW (max) (HM5164805F Series)
: 486 mW/414 mW (max) (HM5165805F Series)
Standby : 1.8 mW (max) (CMOS interface)
: 1.1 mW (max) (L-version)
•
EDO page mode capability
•
Refresh cycles
RAS-only
refresh
8192 cycles /64 ms (HM5164805F, HM5164805FL)
4096 cycles /64 ms (HM5165805F, HM5165805FL)
CBR/Hidden refresh
4096 cycles /64 ms (HM5164805F, HM5164805FL, HM5165805F, HM5165805FL)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
L
This product became EOL in December, 2006.
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