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HM51W16165J-7 参数 Datasheet PDF下载

HM51W16165J-7图片预览
型号: HM51W16165J-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM ( 1 - Mword ×16位), 4K的刷新/ 1千刷新 [16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh]
分类和应用: 动态存储器
文件页数/大小: 35 页 / 598 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EO
Description
Features
HM51W16165 Series
HM51W18165 Series
16 M EDO DRAM (1-Mword
×
16-bit)
4 k Refresh/1 k Refresh
The HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word
×
16-bit. They employ the most advanced CMOS technology for high performance and low power.
HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a high speed
access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil 50-pin
plastic TSOP.
Single 3.3 V (±0.3 V)
Access time: 50 ns/60 ns/70 ns (max)
Power dissipation
Active mode : 396 mW/360mW/324 mW (max) (HM51W16165 Series)
: 684 mW /612 mW /540 mW (max) (HM51W18165 Series)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
EDO page mode capability
Refresh cycles
4096 refresh cycles : 64 ms (HM51W16165 Series)
: 128 ms (L-version)
1024 refresh cycles : 16 ms (HM51W18165 Series)
: 128 ms (L-version)
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
2CAS-byte control
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
LP
E0153H10 (Ver. 1.0)
(Previous ADE-203-650D (Z))
Jul. 6, 2001 (K)
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