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MC-4532CC726XFA-A80 参数 Datasheet PDF下载

MC-4532CC726XFA-A80图片预览
型号: MC-4532CC726XFA-A80
PDF下载: 下载PDF文件 查看货源
内容描述: 32M - WORD 72 - BIT同步动态RAM模块UNBUFFERED TYPE [32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE]
分类和应用:
文件页数/大小: 14 页 / 176 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4532CC726XFA
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-4532CC726XFA is 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
This module provides high density and large quantities of memory in a small space without utilizing the surface-
EO
Features
Part number
MC-4532CC726XFA-A80
128M SDRAM:
µ
PD45128841 are assembled.
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
33,554,432 words by 72 bits organization (ECC type)
Clock frequency and access time from CLK
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length: 1, 2, 4, 8 and full page
Programmable wrap sequence (Sequential / Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
Ω ±10
% of series resistor
Single 3.3 V
±
0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0280N10 (Ver 1.0)
Date Published May 2002 (K) Japan
URL: http://www.elpida.com
L
/CAS latency
Clock frequency
(MAX.)
125 MHz
100 MHz
Access time from CLK
(MAX.)
6 ns
6 ns
CL = 3
CL = 2
This product became EOL in March, 2004.
Elpida
Memory, Inc. 2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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