DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CA727
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
EO
Description
Features
Part number
MC-4516CA727EF-A75
MC-4516CA727PF-A75
MC-4516CA727XF-A75
The MC-4516CA727EF, MC-4516CA727PF and MC-4516CA727XF are 16,777,216 words by 72 bits synchronous
dynamic RAM module on which 9 pieces of 128M SDRAM:
µ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
•
16,777,216 words by 72 bits organization (ECC Type)
•
Clock frequency and access time from CLK
•
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
•
Pulsed interface
•
Possible to assert random column address in every cycle
•
Quad internal banks controlled by BA0 and BA1 (Bank Select)
•
Programmable burst-length (1, 2, 4, 8 and full page)
•
Programmable wrap sequence (sequential / interleave)
•
Programmable /CAS latency (2, 3)
•
Automatic precharge and controlled precharge
•
CBR (Auto) refresh and self refresh
•
All DQs have 10
Ω ±10
% of series resistor
•
Single 3.3 V
±
0.3 V power supply
•
LVTTL compatible
•
4,096 refresh cycles/64 ms
•
Burst termination by Burst Stop command and Precharge command
•
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
•
Unbuffered type
•
Serial PD
Document No. E0056N20 (Ver. 2.0)
Date Published March 2001 CP (K)
Printed in Japan
L
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
5.4 ns
6.0 ns
CL = 3
CL = 2
133 MHz
100 MHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
This product became EOL in September, 2002.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
u
od
Pr
CL = 3
CL = 2
133 MHz
5.4 ns
100 MHz
6.0 ns
CL = 3
CL = 2
133 MHz
5.4 ns
100 MHz
6.0 ns
ct
ELPIDA [ ELPIDA MEMORY ]
