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MC-4R128FKE8S-845 参数 Datasheet PDF下载

MC-4R128FKE8S-845图片预览
型号: MC-4R128FKE8S-845
PDF下载: 下载PDF文件 查看货源
内容描述: 直接Rambus DRAM SO- RIMM模块128M字节( 64M -字×18位) [Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT)]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 14 页 / 124 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R128FKE8S
Direct Rambus DRAM SO-RIMM
TM
Module
128M-BYTE (64M-WORD x 18-BIT)
Description
The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable
for use in a broad range of applications including computer memory, mobile personal computers, networking
systems, and other applications where high bandwidth and low latency are required.
MC-4R128FKE8S modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (
µ
PD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design
technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous
transactions per device.
Features
160 edge connector pads with 0.65mm pad spacing
128 MB Direct RDRAM storage
Each RDRAM
has 32 banks, for 128 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0139N30 (Ver. 3.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2001-2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.