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MC-4R64FKE8D-845 参数 Datasheet PDF下载

MC-4R64FKE8D-845图片预览
型号: MC-4R64FKE8D-845
PDF下载: 下载PDF文件 查看货源
内容描述: 直接Rambus DRAM RIMM模块64M字节( 32M -字×18位) [Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)]
分类和应用: 动态存储器
文件页数/大小: 14 页 / 135 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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MC-4R64FKE8D
(2/2)
Signal
RSCK
SA0
SA1
SA2
SCL
SDA
SIN
SOUT
SV
DD
SWP
V
CMOS
V
DD
V
REF
I/O
I
I
I
I
I
I/O
I/O
I/O
I
Type
V
CMOS
SV
DD
SV
DD
SV
DD
SV
DD
SV
DD
V
CMOS
V
CMOS
SV
DD
Description
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
Serial Presence Detect Address 0.
Serial Presence Detect Address 1.
Serial Presence Detect Address 2.
Serial Presence Detect Clock.
Serial Presence Detect Data (Open Collector I/O).
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
Supply voltage for the RDRAM core and interface logic.
Logic threshold reference voltage for RSL signals.
6
Data Sheet E0080N20 (Ver 2.0)