1742 18 GHz 1550 nm
Microwave DFB Laser
DATASHEET | AUGUST 2013
MICROWAVE
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress
ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect
device reliability.
Parameter
Symbol
TOP
Condition
Min
-40
-40
-
Max
+65
+85
20
Unit
˚C
Operating Temperature Range of Baseplate
Storage Temperature
RF Input Power
Continuous
TSTG
-
˚C
PIN
60 Seconds
dBm
mA
V
Laser Forward dc Current
Photodiode Reverse Voltage
Laser Reverse Voltage
ESD
-
25
120
10
-
VRPD
-
200
-
-
-
-
1
V
HMB: R = 1500 Ohm, C = 100 pF
Continuous
-500
-1.9
500
1.9
V
TEC Current
ITEC
A
Electrical Characteristics
Parameter
Specifications
1550 to + 5
10
Unit
Wavelength
nm
MHz
dBm
%
Spectral Width, FWHM2, Typ., Max
Optical Power, Typical @ ITH +55 mA
Optical Power Stability vs. Temperature
dc Modulations Gain, Typical
8 (min)
+ 15
0.24
-
1. Specifications guaranteed when unit is connected to an optical path with return loss >35 dB.
2. No RF Input.
DC
Parameter
Symbol
IOP
Condition
Min
Max
65
26
6
Units
mA
mA
V
Laser Bias
25°C
-
-
Threshold Current
ITH
25°C
Forward Voltage
VF
IOP = ITH + 50 mA
-
Thermo Electric Cooler
Thermistor
ITEC
-
-1.1
9.5
-
-
A
RTH
25°C
25°C
10
4.4
kΩ
Thermistor Temperature Coefficient
TETH
% / °C
Seven-Pin Miniature Rectangular Connector
Pin
A
B
Description
Thermistor
TEC (-)
C
Thermistor
TEC (+)
D
E
Laser Bias
F
Ground
G
Monitor Photodiode
© 2013 EMCORE Corporation | REV 2013.08
Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice.
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