merging Memory & Logic Solutions Inc.
FEATURES
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Process Technology : 0.18µm Full CMOS
Organization : 64K x 16 bit
Power Supply Voltage : 2.7V ~ 3.6V
Low Data Retention Voltage : 1.5V(Min.)
Three state output and TTL Compatible
Package Type : 44-TSOP2
EM611FV16U Series
Low Power, 64Kx16 SRAM
GENERAL DESCRIPTION
The EM611FV16U families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
EM611FV16U
Operating
Temperature
Industrial (-40 ~ 85
o
C)
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
0.5
µA
2 )
Operating
(I
CC1
.Max.)
3 mA
PKG Type
2.7V~3.6V
55
1)
/70ns
44 TSOP2
1. The parameter is measured with 30pF test load.
2. Typical values are measured at Vcc=3.3V, T
A
=25
o
C and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
Data
Cont
Data
Cont
Pre-charge Circuit
V
C
C
Row S elect
V
SS
Memory Array
1024 x 1024
44 - TSOP2
35
34
33
32
31
30
29
28
27
26
25
24
23
I/O1 ~ I/O8
I/O9 ~ I/O16
I/O Circuit
Column Select
A A
11
10
A
12
A
13
A
14
A
15
W
E
O
E
UB
Control Logic
Name
CS
OE
WE
A
0
~A
15
Function
Chip select input
Output Enable input
Write Enable input
Address Inputs
Name
Vcc
Vss
UB
LB
NC
Function
Power Supply
Ground
Upper Byte (I/O
9~16
)
Lower Byte (I/O
1~8
)
No Connection
LB
CS
I/O
1
~I/O
16
Data Inputs/outputs
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
