EM610FV8 Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
FEATURES
GENERAL DESCRIPTION
• Process Technology : 0.18mm Full CMOS
• Organization :128K x 8 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min)
• Three state output and TTL Compatible
• Package Type : 36-FPBGA 6.0x7.0
The EM610FV8 families are fabricated by EMLSI’ s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc
Range
PKG
Type
Speed
Standby
(ISB1, Typ)
Operating
(ICC1.Max)
Industrial (-40 ~ 85oC)
2.7V~3.6V
551) / 70ns
0.5 mA2)
EM610FV8
3 mA
36FPBGA
1. The parameter is measured with 30pF test load.
2. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
Pre-charge Circuit
A
B
C
D
E
A0
A1
A2
CS2
WE
A3
A4
A6
A7
A8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
VCC
VSS
I/O5
I/O6
VSS
VCC
I/O7
I/O8
A9
I/O1
I/O2
VCC
VSS
I/O3
I/O4
A14
Memory Array
DNU A5
1024 x 1024
Data
Cont
I/O1 ~ I/O8
I/O Circuit
Column Select
F
DNU DNU
G
H
OE
CS1
A11
A16
A12
A15
A13
A
10 A11 A12 A13 A14 A15 A
16
A10
36-FPBGA : Top view (ball down)
WE
OE
Control Logic
CS
1
Name
Function
Name
Function
CS
2
CS ,CS
Chip select inputs
WE Write Enable input
1
2
OE
Output Enable input
Address Inputs
Vcc Power Supply
Vss Ground
A ~A
0
16
I/O ~I/O
Data Inputs/outputs
DNU Do Not Use
1
8
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
