EM620FU16B Series
Low Power, 128Kx16 SRAM
128K x16 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15mm Full CMOS
- Organization : 128K x16
- Power Supply Voltage
=> EM620FU16B Series: 2.7V~3.3V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
-
Package Type: 48-FpBGA
PRODUCT FAMILY
Power Dissipation
Product
Family
EM620FU16B-45LF
EM620FU16B-55LF
EM620FU16B-70LF
Operating
Temperature
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
1µA
1µA
1µA
Operating
(I
CC1
.Max)
3mA
3mA
3mA
PKG Type
GENERAL DESCRIPTION
The EM620FU16B series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack-
age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
The EM620FU16B series are available in KGD and
JEDEC standard 48 pin 6mm x 7mm BGA package.
2.7V~3.3V
2.7V~3.3V
2.7V~3.3V
45ns
55ns
70ns
48-FpBGA
48-FpBGA
48-FpBGA
PIN DESCRIPTIO
1
A
B
C
D
E
F
G
H
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
LB
I/O8
OE
UB
A0
A3
A5
A1
A4
A6
A7
A16
A15
A13
A10
A2
CS1
I/O1
I/O3
I/O4
I/O5
WE
A11
CS2
I/O0
Row Select
Pre-charge Circuit
I/O9 I/O10
V
SS
V
CC
I/O2
V
CC
V
SS
I/O6
I/O7
DNU
I/O11 DNU
I/O12 DNU
A14
A12
A9
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
V
CC
V
SS
Memory Array
1024 x 2048
I/O14 I/O13
I/O15 DNU
DNU
A8
I/O0 ~ I/O7
I/O8 ~ I/O15
Data
Cont
Data
Cont
I/O Circuit
Column Select
48-FpBGA: Top view (Ball down)
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Name
CS1, CS2
OE
WE
A0~A16
I/O0~I/O15
Function
Chip select inputs
Output Enable input
Write Enable input
Address Inputs
Data Inputs/Outputs
Name
Vcc
Vss
UB
LB
NC
Function
Power Supply
Ground
Upper Byte (I/O
9~16
)
Lower Byte (I/O
1~8
)
No Connection
WE
OE
UB
LB
CS1
CS2
Control Logic
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
