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EM625FT8D10S 参数 Datasheet PDF下载

EM625FT8D10S图片预览
型号: EM625FT8D10S
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8位低功耗和低电压全CMOS静态RAM [256K x8 bit Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 427 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM620FV8B Series
Low Power, 256Kx8 SRAM
Document Title
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
0.3
History
Initial Draft
0.1 Revision
0.2 Revision
0.3 Revision
Remove BYTE option information
Remove UB, LB information
Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),
tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),
tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),
ICC(2mA to 3mA), ICC1(2mA to 3mA)
V
IH
level change from 2.0V to 2.2V
Draft Date
June 7, 2007
June 15, 2007
June 21, 2007
July 2, 2007
Remark
0.4
0.4 Revision
Aug. 16, 2007
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Emerging Memory & Logic Solutions Inc.
Zip Code : 690-719
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1