EM621FV16BU Series
Low Power, 128Kx16 SRAM
128K x16 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15mm Full CMOS
- Organization : 128K x16
- Power Supply Voltage
=> EM621FV16BU Series : 2.7V~3.6V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
-
Package Type: 44-TSOP2
PRODUCT FAMILY
Power Dissipation
Product
Family
EM621FV16BU-45LF
EM621FV16BU-55LF
EM621FV16BU-70LF
Operating
Temperature
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
1
µA
1
µA
1
µA
Operating
(I
CC1
.Max)
3mA
3mA
3mA
PKG Type
GENERAL DESCRIPTION
The EM621FV16BU series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack-
age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
The EM621FV16BU series are available in KGD, JEDEC
standard 44 pin 400 mil TSOP2 package.
2.7V~3.6V
2.7V~3.6V
2.7V~3.6V
45ns
55ns
70ns
44-TSOP2
44-TSOP2
44-TSOP2
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/O 0
I/O 1
I/O 2
I/O 3
VCC
VSS
I/O 4
I/O 5
I/O 6
I/O 7
WE
A16
A15
A14
A13
A12
FUNCTIONAL BLOCK DIAGRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O 15
I/O 14
I/O 13
I/O 12
VSS
VCC
I/O 11
I/O 10
I/O 9
I/O 8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Pre-charge Circuit
EM621FV16BU-45LF
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
V
CC
V
SS
Row Select
Memory Array
1024 x 2048
I/O0 ~ I/O7
I/O8 ~ I/O15
Data
Cont
Data
Cont
I/O Circuit
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Name
CS
OE
WE
A0~A16
I/O0~I/O15
Function
Chip select inputs
Output Enable input
Write Enable input
Address Inputs
Data Inputs/Outputs
Name
Vcc
Vss
UB
LB
NC
Function
Power Supply
Ground
Upper Byte (I/O
8~15
)
Lower Byte (I/O
0~7
)
No Connection
WE
OE
UB
LB
CS
Control Logic
2