EM641FT8T Series
Low Power, 512Kx8 SRAM
512K x8 Bit Low Power CMOS Static RAM
FEATURES
- Very high speed : 45ns
- Process Technology : 0.15um Full CMOS
- Organization : 512K x8
- Power Supply Voltage
=> EM641FT8T : 4.5V~5.5V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
-
Package Type: 32-TSOP
PRODUCT FAMILY
Product
Family
EM641FT8T-45LF
EM641FT8T-55LF
EM641FT8T-70LF
Operating
Temperature
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Power Dissipation
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
1.5
µA
1.5
µA
1.5
µA
Operating
(I
CC1
.Max)
7mA
7mA
7mA
PKG Type
GENERAL DESCRIPTION
The EM641FT8T is fabricated by EMLSI’s advanced full
CMOS process technology. The families support industrial
temperature range and Chip Scale Package for user flexi-
bility of system design. The families also supports low data
retention voltage for battery back-up operation with low
data retention current.
The EM641FT8T is available in KGD, JEDEC standard 32
pin 8.0mm x 20.0mm TSOP package.
4.5V~5.5V
4.5V~5.5V
4.5V~5.5V
45ns
55ns
70ns
32-TSOP
32-TSOP
32-TSOP
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A
11
A
9
A
8
A
13
WE
A
17
A
15
V
CC
A
18
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
EM641FT8T
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CS
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
V
SS
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
Pre-charge Circuit
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
V
CC
V
SS
Row Select
Memory Array
512K x 8
I/O
0
~ I/O
7
Data
Cont
I/O Circuit
Column Select
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
Name
CS
OE
WE
A
0
~A
18
I/O
0
~I/O
7
Function
Chip select input
Output Enable input
Write Enable input
Address Inputs
Data Inputs/Outputs
Name
V
CC
V
SS
Function
Power Supply
Ground
WE
OE
CS
Control Logic
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
