EM641FT8
DATA RETENTION CHARACTERISTICS
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Low Power, 512Kx8 SRAM
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
I
SB1
Test Condition
(Chip Disabled)
1)
I
SB1
Test Condition
(Chip Disabled)
1)
See data retention wave form
Min
1.5
-
0
t
RC
Typ
2)
-
1
-
-
Max
-
7
-
-
Unit
V
µA
ns
NOTES
1. See the ISB1 measurement condition of data sheet page 4.
2. Typical value is measured at TA=25
o
C and not 100% tested.
DATA RETENTION WAVE FORM
t
SDR
V
cc
5V
Data Retention Mode
t
RDR
2.2V
¡
V
DR
CS
GND
V
DR
1.5V
CS > Vcc-0.2V
9