EM640FP16 Series
Low Power, 256Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
1.65
0
1.4
-0.3
3)
Typ
1.8
0
-
-
Max
2.2
0
V
CC
+ 0.3
2)
0.4
Unit
V
V
V
V
TA= -40 to 85
o
C, otherwise specified
Overshoot: V
CC
+1.0 V in case of pulse width < 20ns
Undershoot: -1.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
V
OL
V
OH
Cycle time = Min, I
IO
=0mA, 100% duty,
CS
1
=V
IL
, CS
2
=V
IH
, LB=V
IL
or/and UB=V
IL
V
IN
=V
IL
or V
IH
I
OL
= 0.1mA
I
OH
= -0.1mA
CS
1
>V
CC
-0.2V, CS
2
>V
CC
-0.2V (CS
1
controlled)
or 0V<CS
2
<0.2V (CS
2
controlled),
Other inputs = 0 ~ V
CC
(Typ. condition : V
CC
=1.8V @ 25
o
C)
(Max. condition : V
CC
=2.2V @ 85
o
C)
V
IN
=V
SS
to V
CC
CS
1
=V
IH
, CS
2
=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
V
IO
=V
SS
to V
CC
I
IO
=0mA, CS
1
=V
IL
, CS
2
=WE=V
IH
, V
IN
=V
IH
or V
IL
Cycle time=1
µ
s, 100% duty, I
LO
=0mA,
CS
1
<0.2V, LB<0.2V or/and UB<0.2V, CS
2
>V
CC
-0.2V
V
IN
<0.2V or V
IN
>V
CC
-0.2V
Test Conditions
Min
-1
-1
-
-
Typ
-
-
-
-
Max
1
1
2
2
Unit
uA
uA
mA
mA
-
-
1.4
-
-
-
15
0.2
-
mA
V
V
Standby Current (CMOS)
I
SB1
LL
LF
-
1
5
uA
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
