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EM4350A5WT11E 参数 Datasheet PDF下载

EM4350A5WT11E图片预览
型号: EM4350A5WT11E
PDF下载: 下载PDF文件 查看货源
内容描述: 1千位读/写非接触式识别装置 [1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE]
分类和应用: 装置
文件页数/大小: 14 页 / 551 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
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R
EM4150
EM4350
Electrical Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25°C unless otherwise stated
Parameter
Symbol Test Conditions
Min
Supply voltage
V
DD
2.0
2.6
V
DDee
Minimum EEPROM write
voltage
Power Check EEPROM write
I
PWcheck
V
DD
= 3V
Supply current / read
Suppy current / write
Modulator ON voltage drop
Resonance Capacitor
Power On Reset level high
Clock extractor input min.
Clock extractor input max.
EEPROM data endurance
EEPROM retention
I
rd
I
wr
V
ON
C
r
V
prh
V
clkmin
V
clkmax
N
cy
T
ret
Read Mode
Write mode (V
DD
= 3V)
V
(COIL1–Vss)
and V
(COIL2-Vss)
I
coil
= 100µA
V
(COIL1–Vss)
and V
(COIL2-Vss)
I
coil
= 5mA
166.5
Rising Supply
Minimum voltage for Clock Extraction
Maximum voltage to detect modulation stop
Erase all / Write all at V
DD
= 5V
T
op
= 55°C after 100'000 cycles (Note 1)
1.0
50
100'000
10
170
2.0
Typ
Max
5.5
Units
V
V
µA
µA
µA
V
V
pF
V
V
pp
mV
pp
cycles
years
80
3.0
40
5.0
70
0.50
2.50
173.5
2.6
Note 1:
Based on 1000 hours at 150°C
Timing Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25°C unless otherwise stated
All timings are derived from the field frequency and are specified as a number of RF periods.
Parameters
Option : 64 clocks per bit
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
Option : 32 clocks per bit
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
Symbol
Opt64
trdb
tpatt
trdw
tpp
twa
tinit
twee
Opt32
trdb
tpatt
trdw
tpp
twa
tinit
twee
32
160
1600
32
32
1056
2624
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
64
320
3200
64
64
2112
3200
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
Test conditions
Value
Units
including LIW
VDD = 3 V
including LIW
VDD = 3 V
RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used :
The Read bit period (Opt64) would be : 1/125'000*64 = 512 µs, and the time to read 1 word : 1/125'000*3200 = 25.6 ms.
The Read bit period (Opt32) would be : 1/125'000*32 = 256 µs, and the time to read 1 word : 1/125'000*1600 = 12.8 ms.
ATTENTION
Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close
to the edges of the RF-envelope. This desynchronisation will not be larger than ±3 clocks per bit and must be
taken into account when developing reader software.
Copyright
©
2004, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com