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EM4550 参数 Datasheet PDF下载

EM4550图片预览
型号: EM4550
PDF下载: 下载PDF文件 查看货源
内容描述: 1千位读/写非接触式识别装置 [1 KBit Read/Write Contactless Identification Device]
分类和应用: 装置
文件页数/大小: 16 页 / 234 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
 浏览型号EM4550的Datasheet PDF文件第1页浏览型号EM4550的Datasheet PDF文件第2页浏览型号EM4550的Datasheet PDF文件第4页浏览型号EM4550的Datasheet PDF文件第5页浏览型号EM4550的Datasheet PDF文件第6页浏览型号EM4550的Datasheet PDF文件第7页浏览型号EM4550的Datasheet PDF文件第8页浏览型号EM4550的Datasheet PDF文件第9页  
EM4450  
EM4550  
Absolute Maximum Ratings  
Parameter  
Symbol  
Conditions  
Maximum AC peak Current  
induced on COIL1 and COIL2  
Power Supply  
ICOIL  
± 30 mA  
VDD  
Vmax  
Vmin  
Tstore  
-0.3 to 3.5 V  
VDD+0.3V  
Maximum Voltage other pads  
Minimum Voltage other pads  
Storage temperature  
Electrostatic discharge  
maximum  
VSS-0.3V  
-55 to +125°C  
VESD  
2000V  
to MIL-STD-883C method  
3015  
Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified  
operating conditions may affect device reliability or cause malfunction.  
Handling Procedures  
This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be  
taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal  
voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level.  
Operating Conditions  
Parameter  
Symbol Min  
Max Unit  
Operating Temperature  
Maximum coil current  
AC Voltage on Coil  
Supply Frequency  
Top  
ICOIL  
Vcoil  
fcoil  
-40  
+85  
10  
°C  
mA  
Vpp  
note 1  
150 kHz  
100  
note 1: Maximum voltage is defined by forcing 10mA on Coil1 - Coil2.  
Electrical Characteristics  
VDD =2.5V, VSS =0V , fcoil = 125 kHz Sine wave , Vcoil = 1Vpp  
,
Top = 25°C , unless otherwise specified  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
Supply Voltage  
VDD  
2.3  
3.2  
V
Minimum EEPROM write  
voltage  
Power Check EEPROM write  
Supply current / read  
Suppy current / write  
VDDee  
2
V
IPWcheck  
Ird  
Iwr  
VDD = 2.8V  
32  
3
22  
µA  
µA  
Read Mode  
Write mode (VDD = 2.8V)  
µA  
V(COIL1 - VSS) & V(COIL2 - VSS) Icoil = 100µA  
V(COIL1 - VSS) & V(COIL2 - VSS) Icoil = 5 mA  
0.50  
2.50  
85  
V
Modulator ON voltage drop  
VON  
V
Monoflop  
Resonance Capacitor  
Powercheck level  
Tmono  
Cr  
35  
166.6  
2
µs  
170  
173.4  
2.7  
pF  
VPWcheck  
Vprh  
V
Power On Reset level high  
Clock extractor input min.  
Clock extractor input max.  
EEPROM data endurance  
EEPROM retention  
Rising Supply  
1
1.5  
V
Vclkmin  
Vclkmax  
Ncy  
Minimum Voltage for Clock Extraction  
Max. Voltage to detect modulation stop  
Erase all / Write all at VDD = 3.5 V  
Top = 55°C after 100'000 cycles (note 2)  
0.25  
Vpp  
mVpp  
cycles  
years  
25  
100'000  
10  
Tret  
note 2: Based on 1000 hours at 150°C  
3
www.emmicroelectronic.com  
Copyright 2003, EM Microelectronic-Marin SA