EM MICROELECTRONIC-MARIN SA
Electrical Characteristics
Operating Conditions
V
DD
= 2.5V V
SS
= 0V
Parameter
Supply voltage
EEPROM write voltage
Supply current/read
Supply current/read/H
Supply current/write
Supply current/write/H
Modulator voltage drop
V4070
f
coil
= 125 kHz Sine wave
Symbol
Conditions
V
DD
Read Mode
V
EE
I
r d
I
r d H
I
w r
I
w r H
V
ON
V
coil
= 1Vpp
Min.
2
3
T
op
= 25°C
Typ.
Max.
1)
Unit
V
V
5
10
50
80
0.5
µA
µA
µA
µA
V
Read Mode V
DD
=2.0V
Read Mode V
DD
=5.0V
Write Mode V
DD
=3.0V
-40°C<T<85°C
Write Mode V
DD
=5.0V
V
(Coil1-VSS)
& V
(Coil2-VSS)
Icoil = 100µA
V
(Coil1-VSS)
& V
(Coil2-VSS)
Icoil = 5mA
2.5
170
-75
-2
1
40
50
80
200
230
75
2
2.8
V
pF
ppm/K
%
V
Vpp
mVpp
µs
cycles
years
Table 2
Resonance capacitor
Capacitor temp. coeff
Capacitor tolerance/wafer
POR level high
Clock extractor input min.
Clock extractor input max.
MONOFLOP delay
EEPROM data endurance
EEPROM retention
C
r
TK
Cr
TOL
Cr
V
prh
V
clkmin
V
clkmax
T
mono
N
cy
T
ret
-40°C to 85°C
Rising supply
Min for clock extraction
Max for clock extraction
Erase all / Write all
T
op
= 55°C after 1000
cycles
2.2
1000
10
1) Maximum voltage is defined by forcing 10mA on Coil1-Coil2
Timing Characteristics
Parameter
Power on Reset Time
Read Bit Period
LIW/ACK/NACK pattern
Duration
Duration of ID
Divergence-Time
Authentication-Time
WRITE Access Time
EEPROM write Time
Symbol
t
por
t
rdb
t
patt
t
rID
T
div
t
auth
t
w a
t
w e e
Conditions
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods, V
DD
= 3V
Value
600
32
160
1024
224
3744
128
3072
Unit
µs
periods
periods
periods
periods
periods
periods
periods
Table 3
RF periods respresent periods of the carrier frequency emitted by the transceiver unit. For example, if 125 kHz
is used, the Read bit period would be: 1/125’000*32 = 256µs.
3
EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
