R
V6300
V6301
Handling Procedures
Symbol
V
DD
V
min
V
max
T
STO
Conditions
-0.3V to +10V
V
SS
– 0.3V
V
DD
+ 0.3V
-65°C to +150°C
Table 1
Absolute Maximum Ratings
Parameter
Voltage at V
DD
to V
SS
Minimum voltage at RES or
RES
Maximum voltage at RES or
RES
Storage Temperature Range
This device has built-in protection against high static
voltages or electric fields; however, it is advised that normal
precautions be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only occur
when all terminal voltages are kept within the voltage range.
Operating Conditions
Parameter
Symbol Min
1)
Operating Temperature
T
A
-40
Positive Supply Voltage
V
DD
1
1)
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability or
cause malfunction.
Max
+125
8
Unit
°C
V
Table 2
The maximum operating temperature is confirmed by
sampling at initial device qualification.
Electrical Characteristics
T
A
= -40 to +85°C, unless otherwise specified
Parameter
Supply current
1)
Symbol
I
DD
I
DD
I
DD
V
TH
V
TH
V
TH
V
TH
V
TH
V
TH
V
HYS
V
OL
V
OL
V
OL
V
OH
V
OH
V
OH
I
LEAK
Test Conditions
V
DD
= 2V
V
DD
= 5V
V
DD
= 8V
Version: A,G,M
Version: B,H,N
Version: C,I,O
Version: D,J,P
Version: E,K,Q
Version: F,L,R
V
DD
= 5V, I
OL
= 8mA
V
DD
= 3V, I
OL
= 4mA
V
DD
= 1V, I
OL
= 50µA
V
DD
= 5V, I
OH
= -8mA
V
DD
= 3V, I
OH
= -4mA
V
DD
= 1V, I
OH
= -100µA
V
DD
= 8V
3)
Min.
Min @
25°C
Typ.
1.5
3.0
5.2
1.95
2.32
2.73
3.42
3.88
4.42
25
175
140
20
4.5
2.6
950
0.05
Threshold voltage
1.77
2.09
2.48
3.11
3.55
4.05
1.84
2.18
2.59
3.23
3.70
4.22
Max. @
25°C
2.1
3.9
6.8
2.04
2.41
2.86
3.59
4.08
4.67
Max.
3.1
5.7
10.0
2.17
2.55
3.03
3.80
4.32
4.95
400
300
90
Unit
µA
µA
µA
V
V
V
V
V
V
mV
mV
mV
mV
V
V
mV
µA
Table 3
Threshold hysteresis
RES Output Low Level
RES Output High Level
Output leakage current
2)
1)
2)
3)
4.3
2.3
850
1
RES or
RES
open
Only for Open drain versions
Versions A, G and M are tested at V
DD
= 1.8V
Timing Characteristics
V
DD
= 5.0V, T
A
= -40 to +85°C, unless otherwise specified
Parameter
Power on reset time:
V6300
V6301
Sensitivity
4)
Reaction time
4)
4)
Symbol
t
POR
t
SEN
t
R
Test Conditions
V6300
V6301
for V
DD
= 5V to 3V in 5µs
for V
DD
= 5V to 3V in 5µs
Min.
25
140
20
22
Typ.
50
290
0.8 t
R
75
Max.
75
560
150
Units
ms
ms
µs
µs
Table 4
Tested on versions with V
TH
higher than 3V
Copyright © 2006, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
