R
V6309
V6319
Symbol
Conditions
V
DD
-0.3V to + 6.0V
V
min
V
max
I
min
I
max
t
R
P
max
T
A
T
ST
-0.3V
V
CC
+ 0.3V
20 mA
20 mA
100Vµs
320 mW
-40 to +125°C
-65°C to +150°C
Table 2
Absolute Maximum Ratings
Parameter
Terminal voltage to V
SS
Min. voltage at RESET or
RESET
Maximum voltage at RESET or
RESET
Input current at V
DD
Output current at RESET or
RESET
Rate of rise at V
DD
Continuous power dissipation at
T
A
= +70°C for SOT-23
(>70°C derate by 4 mW/°C)
Operating temperature range
Storage temperature range
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability or
cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, it is advised that normal
precautions be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only occur
when all terminal voltages are kept within the voltage range.
Electrical Characteristics
V
DD
= full range, T
A
= -40 to +125°C, unless otherwise specified, typical values at T
A
= +25°C, V
DD
= 5V for versions L and M,
V
DD
= 3.3V for versions T and S, V
DD
= 3 V for R. (Production testing done at T
A
= +25°C and 85°C, over temperature limits
guaranteed by design only)
Parameter
V
DD
range
Supply current
versions L, M
versions R, S, T
1)
RESET threshold
version L
version M
version T
version S
version R
Reset threshold temp. coefficient
1)
V
DD
to reset delay
Reset active timeout period
RESET output voltage low for V6309
versions R, S, T
versions L, M
RESET output voltage high for V6309
versions R, S, T
versions L, M
RESET output voltage low for V6319
versions R, S, T
versions L, M
RESET output voltage high for V6319
Symbol
V
DD
Test Conditions
T
A
= 0 to +70°C
T
A
= -40 to +105C
T
A
= -40 to +125°C
V
DD
< 5.5V
V
DD
< 3.6V
T
A
= +25°C
T
A
= -40 to +125°C
T
A
= +25°C
T
A
= -40 to +125°C
T
A
= +25°C
T
A
= -40 to +125°C
T
A
= +25°C
T
A
= -40 to +125°C
T
A
= +25°C
T
A
= -40 to +125°C
V
DD
= V
TH
to (V
TH
– 100mV)
T
A
= -40 to °125°C
Min.
1.0
1.2
1.6
Typ.
Max.
5.5
5.5
5.5
60
50
4.70
4.79
4.45
4.53
3.11
3.17
2.96
3.02
2.66
2.72
Unit
V
V
V
µA
µA
V
V
V
V
V
V
V
V
V
V
ppm/°C
µs
ms
V
V
V
V
V
I
CC
V
TH
26
16
4.56
4.40
4.31
4.16
3.04
2.92
2.89
2.78
2.59
2.50
4.63
4.38
3.08
2.93
2.63
-200
7
330
140
590
0.3
0.3
0.4
V
OL
V
DD
> 1.0V, I
SINK
= 50µA
V
DD
= V
TH
min., I
SINK
= 1.2mA
V
DD
= V
TH
min., I
SINK
= 3.2mA
V
DD
= V
TH
max., I
SOURCE
= 500µA
V
DD
= V
TH
max., I
SOURCE
= 800µA
V
DD
= V
TH
max., I
SINK
= 1.2mA
V
DD
= V
TH
max., I
SINK
= 3.2mA
1.8V < V
DD
< V
TH
min.,
I
SOURCE
= 150µA
0.8 V
DD
V
DD
-1.5V
V
OH
V
OL
V
OH
0.3
0.4
0.8 V
DD
V
V
V
Table 3
1)
RESET output for V6309 , RESET output for V6319
Copyright © 2006, EM Microelectronic-Marin SA
03/06 – rev.G
2
www.emmicroelectronic.com
EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
