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EN25B20-50GCP 参数 Datasheet PDF下载

EN25B20-50GCP图片预览
型号: EN25B20-50GCP
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位串行闪存与引导和参数部门 [2 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存存储
文件页数/大小: 32 页 / 393 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B20
MEMORY ORGANIZATION
The memory is organized as:
262,144 bytes
Flexible Sector Architecture
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one 32-Kbyte, and three 64-Kbyte sectors
Bottom or top boot configurations
1024 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or
Bulk Erasable but not Page Erasable.
Table 2a. Bottom Boot Block Sector Architecture
Sector
SECTOR SIZE (KByte)
Address range
7
6
5
4
3
2
1
0
64
64
64
32
16
8
4
4
30000h – 3FFFFh
20000h – 2FFFFh
10000h – 1FFFFh
08000h – 0FFFFh
04000h – 07FFFh
02000h – 03FFFh
01000h – 01FFFh
00000h – 00FFFh
Table 2b. Top Boot Block Sector Architecture (Special order)
Sector
SECTOR SIZE (KByte)
Address range
7
6
5
4
3
2
1
0
4
4
8
16
32
64
64
64
3F000h – 3FFFFh
3E000h – 3EFFFh
3C000h – 3DFFFh
38000h – 3BFFFh
30000h – 37FFFh
20000h – 2FFFFh
10000h – 1FFFFh
00000h – 0FFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26