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EN25F20-100GC 参数 Datasheet PDF下载

EN25F20-100GC图片预览
型号: EN25F20-100GC
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位串行闪存与4KB的扇区制服 [2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 31 页 / 395 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F20  
Write Disable (WRDI) (04h)  
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to  
a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip  
Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)  
high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write Status  
Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.  
Read Status Register (RDSR) (05h)  
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register  
may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress.  
When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit  
before sending a new instruction to the device. It is also possible to read the Status Register continuously,  
as shown in Figure 7.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
9
Rev. B, Issue Date: 2007/05/15