EN25F80
EN25F80
8 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
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Single power supply operation
- Full voltage range: 2.7-3.6 volt
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Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
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8 Mbit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
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High performance
- 100MHz clock rate
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Low power consumption
- 12 mA typical active current
- 1
µA
typical power down current
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Uniform Sector Architecture:
256 sectors of 4-Kbyte
16 blocks of 64-Kbyte
Any sector or block can be
erased individually
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Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
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High performance program/erase speed
Page program time: 1.3ms typical
Sector erase time: 90ms typical
Block erase time 500ms typical
Chip erase time: 8 seconds typical
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Lockable 256 byte OTP security sector
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Minimum 100K endurance cycle
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Package Options
8 pins SOP 150mil body width
8 pins SOP 200mil body width
8 contact VDFN
8 pins PDIP
All Pb-free packages are RoHS compliant
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Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25F80 is an 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256
bytes at a time, using the Page Program instruction.
The EN25F80 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25F80 can be configured to protect part of the memory as the software protected mode. The device can
sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. K, Issue Date: 2010/05/31
EON [ EON SILICON SOLUTION INC. ]
