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EN25F05-75VIP 参数 Datasheet PDF下载

EN25F05-75VIP图片预览
型号: EN25F05-75VIP
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的串行闪存与4KB的部门统一 [512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 31 页 / 422 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F05
EN25F05
512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
512 Kbit Serial Flash
- 512 K -bit/ 64 K-byte/ 256 pages
- 256 bytes per programmable page
High performance
- 100MHz clock rate
Low power consumption
- 5 mA typical active current
- 1
μA
typical power down current
-
-
-
Uniform Sector Architecture:
16 sectors of 4-Kbyte
2 blocks of 32-Kbyte
Any sector or block can be
erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Page program time: 1.5ms typical
Sector erase time: 150ms typical
Block erase time 800ms typical
Chip erase time: 1 Seconds typical
Lockable 256 byte OTP security sector
Minimum 100K endurance cycle
-
-
-
Package Options
8 pins SOP 150mil body width
8 contact VDFN
All Pb-free packages are RoHS compliant
Industrial temperature Range
GENERAL DESCRIPTION
The EN25F05 is a 512K-bit (64K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25F05 is designed to allow either single Sector at a time or full chip erase operation. The
EN25F05 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2008/06/23