EN25F10
EN25F10
1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
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Single power supply operation
- Full voltage range: 2.7-3.6 volt
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1 Mbit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
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High performance
- 100MHz clock rate
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Low power consumption
- 5 mA typical active current
- 1
μA
typical power down current
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Uniform Sector Architecture:
32 sectors of 4-Kbyte
4 blocks of 32-Kbyte
Any sector or block can be
erased individually
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Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
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High performance program/erase speed
Page program time: 1.5ms typical
Sector erase time: 150ms typical
Block erase time 800ms typical
Chip erase time: 2 Seconds typical
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Lockable 256 byte OTP security sector
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Minimum 100K endurance cycle
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Package Options
8 pins SOP 150mil body width
8 contact VDFN
All Pb-free packages are RoHS compliant
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Industrial temperature Range
GENERAL DESCRIPTION
The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25F10 is designed to allow either single Sector at a time or full chip erase operation. The
EN25F10 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2008/06/23
EON [ EON SILICON SOLUTION INC. ]
