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EN25F16-100QIP 参数 Datasheet PDF下载

EN25F16-100QIP图片预览
型号: EN25F16-100QIP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存与4KB的扇区制服 [16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 35 页 / 456 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F16
EN25F16
16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
16 Mbit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
High performance
- 100MHz clock rate
Low power consumption
- 5 mA typical active current
- 1
μA
typical power down current
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Uniform Sector Architecture:
512 sectors of 4-Kbyte
32 blocks of 64-Kbyte
Any sector or block can be
erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
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High performance program/erase speed
Page program time: 1.5ms typical
Sector erase time: 150ms typical
Block erase time 800ms typical
Chip erase time: 18 Seconds typical
Lockable 512 byte OTP security sector
Minimum 100K endurance cycle
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Package Options
8 pins SOP 200mil body width
8 contact VDFN
8 pins PDIP
16 pin SOP 300mil body width
All Pb-free packages are RoHS compliant
Industrial temperature Range
GENERAL DESCRIPTION
The EN25F16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25F16 is designed to allow either single Sector at a time or full chip erase operation. The
EN25F16 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2008/06/23