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EN25P10-100GC 参数 Datasheet PDF下载

EN25P10-100GC图片预览
型号: EN25P10-100GC
PDF下载: 下载PDF文件 查看货源
内容描述: 1 Mbit的统一部门,串行闪存 [1 Mbit Uniform Sector, Serial Flash Memory]
分类和应用: 闪存存储
文件页数/大小: 31 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25P10
EN25P10
1 Mbit Uniform Sector, Serial Flash Memory
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
1 M-bit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
High performance
- 100MHz clock rate
Low power consumption
- 5 mA typical active current
- 1
μA
typical power down current
Uniform Sector Architecture:
- Four 32-Kbyte sectors
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Byte program time: 7µs typical
Page program time: 1.5ms typical
Sector erase time: 500 ms typical
Chip erase time: 2 Seconds typical
Minimum 100K endurance cycle
-
-
-
Package Options
8 pins SOP 150mil body width
8 contact VDFN
All Pb-free packages are RoHS compliant
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25P10 is designed to allow either single Sector at a time or full chip erase operation. The
EN25P10 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/5/4