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EN25Q80A-100WIP 参数 Datasheet PDF下载

EN25Q80A-100WIP图片预览
型号: EN25Q80A-100WIP
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位串行闪存与4K字节扇区制服 [8 Megabit Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 50 页 / 1023 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25Q80A
Table 3. Protected Area Sizes Sector Organization
Status Register
Content
BP2
BP1
BP0
Bit
Bit
Bit
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Memory Content
Protect Areas
None
Sector 0 to 253
Sector 0 to 251
Sector 0 to 247
Sector 0 to 239
Sector 0 to 223
Sector 0 to 191
All
Addresses
None
000000h-0FDFFFh
000000h-0FBFFFh
000000h-0F7FFFh
000000h-0EFFFFh
000000h-0DFFFFh
000000h-0BFFFFh
000000h-0FFFFFh
Density(KB)
None
1016KB
1008KB
992KB
960KB
896KB
768KB
1024KB
Portion
None
Lower 254/256
Lower 252/256
Lower 248/256
Lower 240/256
Lower 224/256
Lower 192/256
All
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial
Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is
driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first,
on Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).
The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by
both or none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has
been shifted in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed
(Fast_Read), Read Status Register (RDSR) or Release from Deep Power-down, and Read Device ID
(RDI) instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip Select
(CS#) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write
Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (CS#) must be driven High exactly at a byte boundary, otherwise the instruction
is rejected, and is not executed. That is, Chip Select (CS#) must driven High when the number of clock
pulses after Chip Select (CS#) being driven Low is an exact multiple of eight. For Page Program, if at
any time the input byte is not a full byte, nothing will happen and WEL will not be reset.
In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down
(RES ) minimum number of bytes specified has to be given, without which, the command will be
ignored.
In the case of Page Program, if the number of byte after the command is less than 4 (at least 1
data byte), it will be ignored too. In the case of SE and BE, exact 24-bit address is a must, any
less or more will cause the command to be ignored.
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues
unaffected.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. D, Issue Date: 2009/10/13