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EN25S20-75GIP 参数 Datasheet PDF下载

EN25S20-75GIP图片预览
型号: EN25S20-75GIP
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位1.8V串行闪存与4K字节扇区制服 [2 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 34 页 / 564 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25S20
EN25S20
2 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 1.65-1.95 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
2 M-bit Serial Flash
- 2 M-bit/256 K-byte/1024 pages
- 256 bytes per programmable page
High performance
- 75MHz clock rate
Low power consumption
- 7 mA typical active current
- 1
μA
typical power down current
-
-
-
Uniform Sector Architecture:
64 sectors of 4-Kbyte
4 blocks of 64-Kbyte
Any sector or block can be erased individually
Software and Hardware Write Protection:
- Block Protect Bits are default set to “1” at
Power-up
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Page program time: 1.5ms typical
Sector erase time: 90ms typical
Block erase time 500ms typical
Chip erase time: 2 seconds typical
Lockable 256 byte OTP security sector
Minimum 100K endurance cycle
-
-
-
-
Package Options
8 pins SOP 150mil body width
8 contact USON 2x3 mm
8 contact VDFN 5x6mm
All Pb-free packages are RoHS compliant
Industrial temperature Range
GENERAL DESCRIPTION
The EN25S20 is a 2 Megabit (256K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25S20 is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25S20 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. H, Issue Date: 2011/11/07