EN25S80
EN25S80
8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
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Single power supply operation
- Full voltage range: 1.65-1.95 volt
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Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
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8 M-bit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
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High performance
- 75MHz clock rate
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Low power consumption
- 7 mA typical active current
- 1
μA
typical power down current
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Uniform Sector Architecture:
256 sectors of 4-Kbyte
16 blocks of 64-Kbyte
Any sector or block can be erased individually
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Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
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High performance program/erase speed
Page program time: 1.5ms typical
Sector erase time: 90ms typical
Block erase time 500ms typical
Chip erase time: 8 seconds typical
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Lockable 256 byte OTP security sector
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Minimum 100K endurance cycle
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Package Options
8 pins SOP 150mil body width
8 pins VSOP 200mil body width
8 contact VDFN
All Pb-free packages are RoHS compliant
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Industrial temperature Range
GENERAL DESCRIPTION
The EN25S80 is an 8 Megabit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25S80 is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25S80 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. I, Issue Date: 2011/07/06
EON [ EON SILICON SOLUTION INC. ]
