EN25S40
EN25S40
4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
•
Single power supply operation
- Full voltage range: 1.65-1.95 volt
•
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
•
4 M-bit Serial Flash
- 4 M-bit/512 K-byte/2048 pages
- 256 bytes per programmable page
•
Standard or Dual SPI
- Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
- Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#, HOLD#
•
High performance
- 75MHz clock rate for one data bit
- 50MHz clock rate for two data bits
•
Low power consumption
- 7 mA typical active current
- 1
μA
typical power down current
•
-
-
-
Uniform Sector Architecture:
128 sector of 4-Kbyte
8 blocks of 64-Kbyte
Any sector or block can be erased individually
•
Software and Hardware Write Protection:
- Block Protect Bits are default set to “1” at
Power-up
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
•
-
-
-
-
High performance program/erase speed
Page program time: 1.3ms typical
Sector erase time: 90ms typical
Block erase time 400ms typical
Chip erase time: 3.5 seconds typical
•
Lockable 256 byte OTP security sector
•
Minimum 100K endurance cycle
•
-
-
-
-
Package Options
8 pins SOP 150mil body width
8 contact VDFN 2x3mm
8 contact VDFN 5x6 mm
All Pb-free packages are RoHS compliant
•
Industrial temperature Range
GENERAL DESCRIPTION
The EN25S40 is a 4 Megabit (512K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25S40 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual I/O using SPI pins: Serial Clock, Chip Select, Serial DQ
0
(DI),
DQ
1
(DO), WP# and HOLD#. SPI clock frequencies of up to 50MHz are supported allowing equivalent
clock rates of 100MHz for Dual Output when using the Dual Output Fast Read instructions. The
memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25S40 is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25S40 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. A, Issue Date: 2009/04/28
EON [ EON SILICON SOLUTION INC. ]
