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EN29F010-90TIP 参数 Datasheet PDF下载

EN29F010-90TIP图片预览
型号: EN29F010-90TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8位), 5V闪存 [1 Megabit (128K x 8-bit) 5V Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 35 页 / 428 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29F010
Table 5. EN29F010 Command Definitions
Command
Sequence
Read/Reset
Read
Reset
Read/Reset
AutoSelect
Manufacturer ID
AutoSelect Device ID
AutoSelect Sector
Protect Verify
Byte Program
Chip Erase
Sector Erase
Sector Erase Suspend
Sector Erase Resume
Notes:
Write
Cycles
Req’d
1
Addr
st
Write Cycle
Data
2
Addr
nd
3
Addr
rd
4
Addr
th
5
Addr
th
6
Addr
th
Write Cycle
Data
Write Cycle
Data
Write Cycle
Data
Write Cycle
Data
Write Cycle
Data
1
1
4
4
4
4
4
6
6
1
1
RA
RD
XXXh F0h
555h AAh
555h
555h
555h
555h
555h
555h
xxxh
xxxh
AAh
AAh
AAh
AAh
AAh
AAh
B0h
30h
2AAh
2AAh
2AAh
2AAh
2AAh
2AAh
2AAh
55h
55h
55h
55h
55h
55h
55h
555h
555h
555h
555h
555h
555h
555h
F0h
90h
90h
90h
A0h
80h
80h
RA
000h/
100h
01h
BA &
02h
PA
555h
555h
RD
7Fh/
1Ch
20h
00h/
01h
PD
AAh 2AAh 55h
AAh 2AAh 55h
555h
BA
10h
30h
RA = Read Address: address of the memory location to be read.
This one is a read cycle.
RD = Read Data: data read from location RA during Read operation.
This one is a read cycle.
PA = Program Address: address of the memory location to be programmed
PD = Program Data: data to be programmed at location PA
BA = Sector Address: address of the Sector to be erased. Address bits A16-A14 uniquely select any Sector.
The data is 00h for an unprotected sector and 01h for a protected sector.
Byte Programming Command
Programming the EN29F010 is performed on a byte-by-byte basis using a four bus-cycle operation
(two unlock write cycles followed by the Program Setup command and Program Data Write cycle).
When the program command is executed, no additional CPU controls or timings are necessary. An
internal timer terminates the program operation automatically. Address is latched on the falling edge
of
CE
or
W E
, whichever is last; data is latched on the rising edge of
CE
or
W E
, whichever is first.
The program operation is completed when EN29F010 returns the equivalent data to the
programmed location.
Programming status may be checked by sampling data on DQ7 (
DATA
polling) or on DQ6 (toggle
bit). Changing data from 0 to 1 requires an erase operation. When programming time limit is
exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read
mode.
Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
chip erase command, which in turn invokes the Embedded Erase algorithm. The device does
not
require
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations. The Command Definitions table shows the
address and data requirements for the chip erase command sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20