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EN29GL128H 参数 Datasheet PDF下载

EN29GL128H图片预览
型号: EN29GL128H
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位( 16384K ×8位/ 8192K ×16位)快闪记忆体页模式闪存, CMOS 3.0伏只 [128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存
文件页数/大小: 54 页 / 743 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29GL128H/L
EN29GL128
128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access times as fast as 70 ns
V
IO
Input/Output 1.65 to 3.6 volts
- All input levels (address, control, and DQ input
levels) and outputs are determined by voltage
on V
IO
input. V
IO
range is 1.65 to V
CC
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall
programming time for multiple-word updates
Secured Silicon Sector region
- 128-word/256-byte sector for permanent,
secure identification
- Can be programmed and locked by the
customer
Uniform 64Kword/128KByte Sector
Architecture One hundred twenty-eight
sectors
Suspend and Resume commands for
Program and Erase operations
Write operation status bits indicate program
and erase operation completion
Support for CFI (Common Flash Interface)
Persistent methods of Advanced Sector
Protection
WP#/ACC input
- Accelerates programming time (when V
HH
is
applied) for greater throughput during system
production
- Protects first or last sector regardless of
sector protection settings
Hardware reset input (RESET#) resets
device
Ready/Busy# output (RY/BY#) detects
program or erase cycle completion
Minimum 100K program/erase endurance
cycles.
Package Options
- 56-pin TSOP
- 64-ball 11mm x 13mm BGA
Industrial Temperature Range.
GENERAL DESCRIPTION
The EN29GL128 offers a fast page access time of 25 ns with a corresponding random access time as
fast as 70 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed
in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes the device ideal for today’s embedded applications that require higher density, better
performance and lower power consumption.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. K, Issue Date: 2010/05/11