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EN29LV010-70TC 参数 Datasheet PDF下载

EN29LV010-70TC图片预览
型号: EN29LV010-70TC
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8位)的统一部门, CMOS 3.0伏只快闪记忆体 [1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory]
分类和应用:
文件页数/大小: 35 页 / 402 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV010
COMMAND DEFINITIONS
The operations of the EN29LV010 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV010 Command Definitions
Bus Cycles
Command
Sequence
Read
Reset
Manufacturer ID
Autoselect
Cycles
1
RA
Xxx
555
st
2
RD
F0
AA
2AA
nd
3
Add
rd
4
Add
th
5
th
6
th
Cycle
Add
Data
Cycle
Add
Data
Cycle
Data
Cycle
Data
Cycle
Add
Data
Cycle
Add
Data
1
1
4
55
555
90
100
1C
Device ID
4
555
AA
2AA
55
555
90
X01
6E
Sector Protect Verify
4
555
AA
2AA
55
555
90
(SA)
X02
PA
00/
01
PD
Program
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
Sector Erase
Erase Suspend
Erase Resume
4
3
2
2
6
6
1
1
555
555
XXX
XXX
555
555
xxx
xxx
AA
AA
A0
90
AA
AA
B0
30
2AA
2AA
PA
XXX
2AA
2AA
55
55
PD
00
55
55
555
555
A0
20
555
555
80
80
555
555
AA
AA
2AA
2AA
55
55
555
SA
10
30
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A16-A14 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array
data using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2004/01/05