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EN29LV320AB-90TIP 参数 Datasheet PDF下载

EN29LV320AB-90TIP图片预览
型号: EN29LV320AB-90TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4096K ×8位/ 2048K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存存储
文件页数/大小: 49 页 / 411 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV320A
EN29LV320A
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
μA
current in standby or automatic
sleep mode.
Standard DATA# polling and toggle bits
feature
Unlock Bypass Program command supported
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Low Vcc write inhibit < 2.5V
Minimum 100K program/erase endurance
cycles.
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
Commercial and Industrial Temperature
Range.
Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
-
-
-
High performance program/erase speed
Word program time: 8µs typical
Sector erase time: 500ms typical
Chip erase time: 70s typical
JEDEC Standard compatible
GENERAL DESCRIPTION
The EN29LV320A is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The
EN29LV320A features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV320A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/07/17