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EN29LV640B-90TP 参数 Datasheet PDF下载

EN29LV640B-90TP图片预览
型号: EN29LV640B-90TP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8M ×8位/ 4M ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存
文件页数/大小: 53 页 / 476 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV640T/B
EN29LV640T/B
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
μA
current in standby or automatic
sleep mode.
Standard DATA# polling and toggle bits
feature
Unlock Bypass Program command supported
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Low Vcc write inhibit < 2.5V
Minimum 100K program/erase endurance
cycles.
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
Commercial and Industrial Temperature
Range.
Flexible Sector Architecture:
- Eight 8-Kbyte sectors, One hundred and
twenty-seven 32K-Word / 64K-byte sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
-
-
-
High performance program/erase speed
Word program time: 8µs typical
Sector erase time: 500ms typical
Chip erase time: 64s typical
JEDEC Standard compatible
GENERAL DESCRIPTION
The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The
EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16