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EN29LV640T-90TP 参数 Datasheet PDF下载

EN29LV640T-90TP图片预览
型号: EN29LV640T-90TP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8M ×8位/ 4M ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存
文件页数/大小: 53 页 / 476 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV640T/B
ORDERING INFORMATION
T
EN29LV640
70
T
C
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
T = 48-pin TSOP
B = 48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 6mm x 8mm package
SPEED
70 = 70ns
90 = 90ns
BOOT CODE SECTOR ARCHITECTURE
T = Top boot Sector
B = Bottom boot Sector
BASE PART NUMBER
EN = EON Silicon Solution Inc.
29LV = FLASH, 3V Read, Program and Erase
640 = 64 Megabit (8M x 8 / 4M x 16)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16