EN29LV640
EN29LV640
64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only,
Uniform Sector Flash Memory
FEATURES
•
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts for read,
erase and program operations
•
Low power cons
umption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
μA
current in standby or automatic
sleep mode.
Software features:
•
Sector Group Protection
- Provide locking of sectors to prevent program
or erase operations within individual sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
protected sectors.
•
Standard DATA# polling and toggle bits
feature
•
Unlock Bypass Program command supported
•
Sector Erase Suspend / Resume modes:
Read and program another Sector during
Sector Erase Suspend Mode
•
Support JEDEC Common Flash Interface
(CFI).
Hardware features:
•
Pin compatible to lower density, easy
replacement for code expansion.
•
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
•
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of first or last 32K-word sector,
regardless of previous sector protect status
- Acceleration (ACC) function provides
accelerated program times
•
JEDEC standards compatible
- Pinout and software compatible with single-
power supply Flash standard
•
Manufactured on 0.18μm process
technology
•
Flexible Sector Architecture:
- One hundred and twenty-eight 32K-Word /
64K-byte sectors.
•
Minimum 100K program/erase endurance
cycles.
•
-
-
-
High performance for program and erase
Word program time: 8µs typical
Sector Erase time: 500ms typical
Chip Erase time: 64s typical
•
Package Options
- 48-pin TSOP
- 48-ball FBGA
GENERAL DESCRIPTION
The EN29LV640H/L / EN29LV640U is a 64-Megabit ( 4Mx16 ), electrically erasable, read/write non-
volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely
command set compatible with the JEDEC single-power-supply Flash standard.
The EN29LV640H/L / EN29LV640U is designed to allow either single Sector or full Chip erase
operation, where each Sector Group can be protected against program/erase operations or
temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/01/23
EON [ EON SILICON SOLUTION INC. ]
