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EN29LV641H-70TIP 参数 Datasheet PDF下载

EN29LV641H-70TIP图片预览
型号: EN29LV641H-70TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 4096K ×16位)快闪记忆体, CMOS 3.0伏只统一部门快闪记忆体 [64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory]
分类和应用:
文件页数/大小: 46 页 / 523 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV641H/L EN29LV640U
EN29LV641H/L EN29LV640U
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only
Uniform Sector Flash Memory
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts for read,
erase and program operations
Low power cons
umption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
µA
current in standby or automatic
sleep mode.
Software features:
Sector Group Protection
- Provide locking of sectors to prevent program
or erase operations within individual sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
protected sectors.
Standard DATA# polling and toggle bits
feature
Unlock Bypass Program command supported
Sector Erase Suspend / Resume modes:
Read and program another Sector during
Sector Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Hardware features:
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
WP# input pin
- Write Protect (WP#) function allows
protection of first or last 32K-word sector,
regardless of previous sector protect status
ACC input pin
- Acceleration (ACC) function provides
accelerated program times for higher
throughput for manufacturing.
JEDEC standards compatible
- Pinout and software compatible with single-
power supply Flash standard
Manufactured on 0.18μm process
technology
Flexible Sector Architecture:
- One hundred and twenty-eight 32K-Word
sectors.
Minimum 100K program/erase endurance
cycles.
-
-
-
High performance for program and erase
Word program time: 8µs typical
Sector Erase time: 500ms typical
Chip Erase time: 64s typical
Package Options
- 48-pin TSOP
- 63 ball 11mm x 12mm FBGA
GENERAL DESCRIPTION
The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write
non-volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely
command set compatible with the JEDEC single-power-supply Flash standard.
The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase
operation, where each Sector Group can be protected against program/erase operations or
temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2005/06/27