EN39LV010
EN39LV010
1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
FEATURES
•
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
•
High performance
- Full voltage range: access times as fast as 70
ns
- Regulated voltage range: access times as fast
as 45ns
•
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
µA
typical standby current (standard access
time to active mode)
•
Flexible Sector Architecture:
- Thirty-two 4 Kbyte sectors
•
Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
•
High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 90ms typical
•
JEDEC Standard program and erase
commands
•
JEDEC standard
DATA
polling and toggle bits
feature
•
Single Sector and Chip Erase
•
Embedded Erase and Program Algorithms
•
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
•
triple-metal double-poly triple-well CMOS Flash
Technology
•
Low Vcc write inhibit < 2.5V
•
Minimum 100K program/erase endurance
cycles
•
Package options
- 4mm x 6mm 34-ball WFBGA
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
•
Industrial Temperature Range
GENERAL DESCRIPTION
The EN39LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 131,072 bytes. Any byte can be programmed typically in 8µs.The EN39LV010 features 3.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN39LV010 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2009/03/16
EON [ EON SILICON SOLUTION INC. ]
