EN39SL160AH/L
EN39SL160AH/L
16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform
Sector, CMOS 1.8 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range:1.65-1.95 volt for read and
write operations.
- Ideal for battery-powered applications.
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 5 mA typical active read current
- 15 mA typical program/erase current
- 0.2
μA
typical standby current
•
Uniform Sector Architecture:
- 512 sectors of 2-Kword
- 32 blocks of 32-Kword
- Any sector or block can be erased individually
•
WP#/ACC Input pin:
- Write protect (WP#) function allows protection
the first or last blocks, regardless of block
protect status
- Acceleration (ACC) function acceleration
program timing.
•
Block Group protection:
- Hardware locking of blocks to prevent
program or erase operations within individual
blocks
- Additionally, temporary Block Unprotect
allows code changes in previously locked
blocks.
•
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High performance program/erase speed
Word program time: 8µs typical
Sector erase time: 90ms typical
Block erase time: 180ms typical
Chip erase time: 4s typical
•
JEDEC Standard Embedded Erase and
Program Algorithms
•
JEDEC standard DATA# polling and toggle
bits feature
•
Single Sector, Block and Chip Erase
•
Chip Unprotect Mode
•
Erase Suspend / Resume modes:
Read or program another Sector/Block during
Erase Suspend Mode
•
Low Vcc write inhibit < 1.2V
•
Minimum 100K endurance cycle
•
Package Options
- 48-ball 6mm x 8mm TFBGA
- 48-ball 4mm x 6mm WFBGA
•
Industrial temperature Range
GENERAL DESCRIPTION
The EN39SL160AH/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 words. Any word can be programmed typically in 8µs.The EN39SL160AH/L
features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for
WAIT statements in high-performance microprocessor systems.
The EN39SL160AH/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block
or full chip erase operation, where each block can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. C, Issue Date: 2011/09/15