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EN71NS032A0-9DCWP 参数 Datasheet PDF下载

EN71NS032A0-9DCWP图片预览
型号: EN71NS032A0-9DCWP
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM 32兆位( 2M ×16位) CMOS 1.8伏只突发同时使用,复用闪存和16兆位( 1M ×16位)伪静态RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM]
分类和应用: 闪存
文件页数/大小: 10 页 / 286 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN71NS032A0
EN71NS032A0
Stacked Multi-Chip Product (MCP) Flash Memory and RAM
32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous
Operation, Multiplexed Flash Memory and
16 Megabit (1M x 16-bit) Pseudo Static RAM
Distinctive Characteristics
MCP Features
Power supply voltage of 1.7V to 1.95V
High performance
- 70 ns @ random access
- 7 ns @ burst access (108MHz)
Package
- 6.2 x 7.7 x 1.0mm 56 ball BGA
Operating Temperature
- 25°C to +85°C
General Description
EN71NS032A0 is a product line of stacked Multi-Chip Product (MCP) packages and consists of:
Burst Simultaneous Operation, Multiplexed NOR Flash Memory.
Burst Mode, Multiplexed Pseudo SRAM.
For detailed specifications, Please refer to the individual datasheets listed in the following table.
Device
NOR Flash Memory
Pseudo SRAM
Document
EN29NS032
ENPSS16
Flash Density
Flash Access time
Flash Burst mode
max frequency
Package
32Mb
70ns at Async. Mode
7ns at Burst Read
108MHz
56-ball BGA
pSRAM density
pSRAM Access time
pSRAM Burst mode
max frequency
16Mb
70ns at Async. Mode
7ns at Burst Read
108MHz
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. B, Issue Date: 2011/07/05